vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 1 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor/thyristor, 160 a (new int-a-pak power modules) features ? high voltage ? electrically isolated by dbc ceramic (ai 2 o 3 ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? modules uses high voltage po wer thyristor/diodes in three basic configurations ? simple mounting ? ul approved file e78996 ? designed and qualifie d for multiple level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? dc motor control and drives ? battery charges ? welders ? power converters ? lighting control ? heat and temperature control ? electrical specifications product summary i t(av) 160 a type modules - thyristor, standard package int-a-pak new int-a-pak major ratings and characteristics symbol characteristics values units i t(av) 85 c 160 a i t(rms) 355 i tsm 50 hz 4870 60 hz 5100 i 2 t 50 hz 119 ka 2 s 60 hz 108 i 2 ? t 1190 ka 2 ? s v rrm range 1200 and 1600 v t j range -40 to +125 c voltage ratings type ? number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm /v dsm , maximum non- repetitive peak reverse voltage v i rrm /i drm at 125 c ma vs-vsk.162 12 1200 1300 50 16 1600 1700
vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 2 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 160 a 85 c maximum rms on-state current i t(rms) as ac switch 355 a maximum peak, one-cycle ? on-state, non-repetitive ? surge current i tsm t = 10 ms no voltage ? reapplied sine half wave, ? initial t j = ? t j maximum 4870 t = 8.3 ms 5100 t = 10 ms 100 % v rrm ? reapplied 4100 t = 8.3 ms 4300 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 119 ka 2 s t = 8.3 ms 108 t = 10 ms 100 % v rrm ? reapplied 84 t = 8.3 ms 76.7 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 1190 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 0.8 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j maximum 0.98 low level value on-state ? slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j maximum 1.67 m ? high level value on-state ? slope resistance r t2 (i > ? x i t(av) ), t j maximum 1.38 maximum on-state voltage drop v tm i tm = ? x i t(av) , t j = 25 c, 180 conduction 1.54 v maximum forward voltage drop v fm i tm = ? x i t(av) , t j = 25 c, 180 conduction 1.54 v maximum holding current i h anode supply = 6 v initial i t = 30 a, t j = 25 c 200 ma maximum latching current i l anode supply = 6 v resistive load = 1 ?? gate pulse: 10 v, 100 s, t j = 25 c 400 switching parameter symbol test conditions values units typical delay time t gd t j = 25 c gate current = 1 a, dl g /dt = 1 a/s ? v d = 0.67 % v drm 1 s typical rise time t gr 2 typical turn-off time t q i tm = 300 a, - dl/dt = 15 a/s; t j = t j maximum ? v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 ? 50 to 200 blocking parameter symbol test conditions values units maximum peak reverse and ? off-state leakage current i rrm , i drm t j = 125 c 50 ma rms insulation voltage v ins 50 hz, circuit to base, ? all terminals shorted, t = 1 s 3500 v critical rate of rise of ? off-state voltage dv/dt t j = t j maximum, ? exponential to 67 % rated v drm 1000 v/s
vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 3 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t p ? 5 ms, t j = t j maximum 12 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 3 maximum peak gate current i gm t p ? 5 ms, t j = t j maximum 3a maximum peak negative ? gate voltage - v gt 10 v maximum required dc ? gate voltage to trigger v gt t j = - 40 c anode supply = 6 v, ? resistive load; r a = 1 ? 4 t j = 25 c 2.5 t j = t j maximum 1.7 maximum required dc ? gate current to trigger i gt t j = - 40 c 270 ma t j = 25 c 150 t j = t j maximum 80 maximum gate voltage ? that will not trigger v gd t j = t j maximum, rated v drm applied 0.3 v maximum gate current ? that will not trigger i gd 10 ma maximum rate of rise of ? turned-on current di/dt t j = t j maximum, i tm = 400 a rated v drm applied 300 a/s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating ? temperature range t j -40 to +125 c maximum storage ? temperature range t stg -40 to +150 maximum thermal resistance, ? junction to case per junction r thjc dc operation 0.16 k/w maximum thermal resistance, ? case to heat sink per module r thcs mounting surface, smooth, flat and greased 0.05 mounting ? torque 10 % iap to heat sink a mounting compound is recommended and the torque should be rechecked after a period of ? 3 hours to allow for the spread of the compound. lubricated threads. 4 to 6 nm busbar to iap approximate weight 200 g 7.1 oz. case style int-a-pak ? r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vs-vsk.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040 k/w
vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 4 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ngs characteristics fig. 2 - current rati ngs characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 70 80 90 100 110 120 130 0306090120150180 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) r (d c ) = 0.16 k/w thjc 60 70 80 90 100 110 120 130 0 50 100150200250300 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period r (dc) = 0.16 k/w thjc 0 50 100 150 200 250 300 350 400 0 20406080100120140160180 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) per junction t = 125c j 180 120 90 60 30 0 50 100 150 200 250 300 350 400 0 306090120150180210240270 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) per junction t = 125c j 1500 2000 2500 3000 3500 4000 4500 0 0 1 0 1 1 num ber o f eq ua l am plitud e ha lf c ycle c urrent pulses (n) at any rated load condition and with rated v applied following surge. rrm peak half sine wave on-state current (a) in itia l t = 125c at 60 hz 0.0083 s at 50 hz 0.0100 s per junction j 1500 2000 2500 3000 3500 4000 4500 5000 1 1 . 0 1 0 . 0 peak half sine w ave o n-state c urrent (a) pulse train duration (s) maximum non repetitive surge current of conduction may not be maintained. per junction in itia l t = 125c no voltage reapplied rated v reapplied rrm versus pulse train duration. control j
vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 5 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics 0 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 2 k / w - r t h s a 0 . 0 4 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 k / w 0 . 1 6k / w 0 . 2 k / w 0 100 200 300 400 500 600 0 100 200 300 400 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle per module t = 12 5c j r = 0 . 0 4 k / w - r 0255075100125 maximum allowable ambient temperature (c) t h s a 0 . 0 8 k / w 0 . 2 k / w 1 k / w 0 . 6 k / w 0 . 4 k / w 0 . 1 2 k / w 0 . 3 k / w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 total output current (a) maximum total power loss (w) single phase bridge connected t = 125c j 180 (sine) 180 (rect) 0 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 2 k / w - r 0 . 0 4 k / w 0 . 2 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 6 k / w 0 . 3 k / w t h s a 0 250 500 750 1000 1250 1500 0 50 100 150 200 250 300 350 400 450 total output current (a) maximum total power loss (w) 120 (rect) three phase bridge connected t = 12 5c j
vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 6 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - on-state voltage drop characteristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 1 10 100 1000 10000 012345 t = 25?c j t = 125?c j instantaneous on-state voltage (v) instantaneous on-state current (a) square wave pulse duration (s) transient thermal impedance z thjc 0.01 0.1 1 0.01 0.1 1 10 steady state value (dc operation) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b ) (a) rectangular gate pulse (4) (3) (2) (1) in stan taneous ga te voltage (v ) t j = -40 c t j = 25 c t j = 125 c a)recommended load line for b)recommended load line for vgd ig d (1) pgm = 200 w , tp = 300 s (2) pgm = 60 w , tp = 1 m s (3) pgm = 30 w , tp = 2 m s (4) pgm = 12 w , tp = 5 m s <= 30% rated di/dt: 15 v, 40 w tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 w tr = 0.5 s, tp >= 6 s frequency limited by pg(av) instantaneous gate current (a) 1 3 - circuit configuration 4 - current rating: i t(av) 5 - voltage code x 100 = v rrm - pbf = lead (pb)-free device code 5 1 3 2 4 vs-vs ku 16 pbf 162 - vishay semiconductors product 2
vs-vsku162...pbf, vs-vskv162...pbf series www.vishay.com vishay semiconductors revision: 20-nov-15 7 document number: 95901 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration circuit description circuit configuration code circuit drawing common cathode configuration u common anode configuration v links to related documents dimensions www.vishay.com/doc?95067 vsku k2 g2 k1 g1 1 2 3 ~ ~ k2 g2 k1 g1 (1) (2) (3) - - - - vskv ~ ~ k2 g2 k1 g1 k2 g2 k1 g1 1 2 3 (1) (2) (3) + + + +
document number: 95067 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-feb-08 1 int-a-pak igbt/thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 80 (3.15) ? 6.5 (0.25 dia) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) 37 (1.44) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 7 6 5 4 123 23 (0.91) 23 (0.91) 17 (0.67) 35 (1.38) 14.5 (0.57) 3 screws m6 x 10 66 (2.60) 94 (3.70)
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